Details

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BUY L9700D013TR https://www.utsource.net/itm/p/8841016.html

Parameter	Value	Unit
Part Number	L9700D013TR	-
Description	N-Channel Enhancement Mode MOSFET	-
Drain-Source Voltage	100	V
Continuous Drain Current	13	A
Gate-Source Voltage	±20	V
Power Dissipation	46	W
Junction Temperature	-55 to +175	°C
Package Type	TO-220AB	-
RDS(on)	8.5 (Max at VGS=10V, ID=13A)	mΩ

Instructions:

1. Handling and Storage: Store in a dry environment. Handle with care to avoid damage to the leads and body.
2. Mounting: Ensure proper heat sinking for applications requiring high power dissipation.
3. Soldering: Use standard soldering techniques suitable for leaded components. Avoid excessive heat during soldering to prevent damage.
4. Electrical Connections: Ensure correct polarity connections. The drain, source, and gate must be connected according to the circuit design.
5. Operating Conditions: Operate within specified voltage and current limits to ensure reliability and longevity.
6. Testing: Before installation, verify the component parameters using appropriate testing equipment to ensure it meets the required specifications.

(For reference only)