Details

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BUY G718TM1U https://www.utsource.net/itm/p/9104765.html

Parameter	Description	Value	Unit
Part Number	Component Identifier	G718TM1U	-
Type	Device Type	MOSFET	-
Package	Housing Type	TO-252	-
VDS	Drain-to-Source Voltage	60	V
VGS(th)	Gate Threshold Voltage	2.0 to 4.0	V
ID	Continuous Drain Current	11.5	A
PD	Total Power Dissipation	1.2	W
RDS(on)	On-State Resistance at VGS = 10V	35	mΩ
TJ	Junction Temperature Range	-55 to +150	°C
SOA	Safe Operating Area	Refer to Datasheet	-

Instructions for Use:

1. Handling Precautions: The G718TM1U is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling and installation.
2. Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation to maintain junction temperature within specified limits.
3. Biasing: Apply gate voltages within the specified VGS(th) range to ensure reliable operation. Avoid exceeding the maximum VGS rating.
4. Safe Operating Area (SOA): Refer to the datasheet for detailed safe operating area curves to avoid damaging the device under transient conditions.
5. Storage: Store in a dry, cool place away from direct sunlight and sources of heat or moisture.

(For reference only)