Details

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BUY AGQ200A12Z https://www.utsource.net/itm/p/9105669.html

Parameter	Description	Value	Unit
Part Number	Product Identifier	AGQ200A12Z	-
Type	Device Type	MOSFET	-
Configuration	Channel Configuration	N-Channel	-
Vds	Drain-Source Voltage	200	V
Id	Continuous Drain Current	12	A
Pd	Total Power Dissipation	65	W
Rds(on)	On-Resistance at 25°C, Vgs=10V	4.5	mΩ
Vgs(th)	Gate Threshold Voltage	2.0 to 4.0	V
Qg	Total Gate Charge	75	nC
Package	Enclosure Type	TO-247	-
Operating Temp.	Junction Temperature Range	-55 to +175	°C

Instructions for Use:

1. Handling Precautions: The AGQ200A12Z is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
2. Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation to maintain junction temperature within specified limits.
3. Storage: Store in original packaging in a dry environment until ready for use.
4. Soldering: Use temperatures not exceeding 260°C for no longer than 10 seconds per connection. Avoid excessive thermal shock.
5. Testing: When testing or evaluating the device, ensure that all voltages and currents do not exceed the maximum ratings provided.
6. Application Circuits: Refer to application notes for recommended circuits and layouts to achieve optimal performance.

(For reference only)