Details

---

BUY K4T1G164QG-BCE7 https://www.utsource.net/itm/p/9106079.html

Parameter	Description	Value
Product Name	K4T1G164QG-BCE7	DDR4 SDRAM
Capacity	Memory Size	1 Gb (128 Mb x 8)
Organization	Internal Organization	16 banks, 8-bit I/O
Voltage	Supply Voltage (VDD, VDDQ)	1.2V ± 0.1V
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Data Rate	Supported Data Rates	1600, 1866, 2133, 2400 MT/s
Package Type	Package	BGA
Ball Grid Array	Number of Balls	96
Features	On-Die ECC, DLL Free, RTT Nom, Write DQS, PD Mode	Included
CAS Latency	Available CAS Latencies	CL13, CL15, CL17, CL19
RAS# to CAS# Delay	RCD Timing	tRCD = 13, 15, 17, 19
Row Precharge Time	RP Timing	tRP = 13, 15, 17, 19
Row Active Time	RAS# Low Pulse Width	tRAS = 32, 34, 36, 38

Instructions for Use:

1. Power Supply: Ensure that the supply voltage (VDD and VDDQ) is set to 1.2V ± 0.1V.
2. Temperature Management: Operate within the industrial temperature range of -40°C to +85°C.
3. Initialization: Perform a reset sequence upon power-up or after any power interruption.
4. Memory Configuration: Configure the memory using the appropriate JEDEC standard commands.
5. Timing Parameters: Set the timing parameters according to the data rate being used, ensuring compliance with specified CAS latency, RAS# to CAS# delay, row precharge time, and row active time.
6. Error Correction: Utilize the on-die ECC feature to correct single-bit errors and detect double-bit errors.
7. Signal Integrity: Ensure proper termination and routing for high-speed signals such as DQS and data lines to maintain signal integrity.
8. Power Down Modes: Use the provided power-down modes to minimize power consumption during idle periods.

(For reference only)