Details
BUY S34ML01G100TFI00 https://www.utsource.net/itm/p/9106278.html
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| Parameter | Description | Value | Unit |
|---|---|---|---|
| Product Family | NAND Flash Memory | S34ML01G100TFI00 | |
| Storage Capacity | Total storage capacity | 1 | Gb |
| Interface | Communication interface type | Toggle Mode (2.0) | |
| Package Type | Physical package of the device | WSON | |
| Number of Pins | Number of connection pins | 8 | |
| Operating Voltage VCC | Supply voltage range | 2.7 - 3.6 | V |
| Operating Temperature | Ambient operating temperature range | -40 to +85 | °C |
| Read Speed | Maximum read speed | 200 | MB/s |
| Write Speed | Maximum write speed | 160 | MB/s |
| Endurance | Program/Erase cycles | 3000 | |
| Data Retention | Years data is retained | 10 | years |
| ECC Requirement | Error Correction Code requirement | Up to 24-bit ECC per 1Kb | bits |
Instructions for Use:
- Power Supply Requirements: Ensure that the supply voltage (VCC) is within the specified range of 2.7V to 3.6V.
- Temperature Considerations: Operate the device within the ambient temperature range of -40°C to +85°C to avoid damage or malfunction.
- Interface Configuration: Configure the device using the Toggle Mode 2.0 interface as per the datasheet specifications.
- Read/Write Operations: Utilize the maximum read speed of 200 MB/s and write speed of 160 MB/s for optimal performance.
- Endurance Management: Be aware of the program/erase cycle endurance limit of 3000 cycles and manage write operations accordingly.
- Data Retention: Ensure that data retention requirements are met, noting that data can be retained for up to 10 years under proper conditions.
- Error Correction: Implement an ECC scheme capable of correcting up to 24-bit errors per 1Kb to maintain data integrity.
For detailed configuration and advanced settings, refer to the specific application notes and datasheets provided by the manufacturer.
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