Details

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BUY 16TQC100MYF https://www.utsource.net/itm/p/9163242.html

Parameter	Description
Part Number	16TQC100MYF
Type	Power MOSFET
Configuration	N-Channel
Package Type	TO-220
Maximum Drain Current	100A (at 25°C)
Maximum Gate-Source Voltage	±20V
Maximum Drain-Source Voltage	100V
Maximum Power Dissipation	140W (at 25°C)
RDS(on)	3.5mΩ (at VGS=10V, ID=50A)
Gate Charge	97nC
Switching Frequency	Optimized for high-frequency switching applications
Operating Temperature Range	-55°C to +150°C
Storage Temperature Range	-65°C to +175°C

Instructions:

1. Installation: Ensure that the device is mounted on a heatsink if operating near maximum current or power dissipation limits to maintain optimal performance and longevity.
2. Handling Precautions: The MOSFET is sensitive to ESD (Electrostatic Discharge). Use proper anti-static precautions during handling and installation.
3. Gate Drive Requirements: Ensure that the gate drive circuitry can provide sufficient voltage and current to fully turn on the MOSFET within its specified parameters.
4. Thermal Management: Monitor the junction temperature to avoid exceeding the maximum allowable temperature. Adequate cooling measures should be in place.
5. Storage: Store in a dry environment away from direct sunlight and extreme temperatures.
6. Soldering: Follow standard soldering practices for surface mount devices. Avoid excessive heat exposure beyond the storage temperature range.
7. Testing: Before operational use, perform initial testing under controlled conditions to ensure the device functions within expected parameters.

(For reference only)