Details

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BUY IRFP4332PBF https://www.utsource.net/itm/p/9228319.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	V(DS)	-	-	55	V
Gate-Source Voltage	V(GS)	-10	-	20	V
Continuous Drain Current	I(D)	-	-	30	A	TC = 25°C
Pulse Drain Current	I(D pul)	-	-	90	A	t(p) = 10 μs, I(G) = 10 mA
Power Dissipation	P(TOT)	-	-	80	W	TC = 25°C
Junction Temperature	T(J)	-	-	175	°C
Storage Temperature	T(STG)	-65	-	150	°C

Instructions for Use:

1. Handling Precautions: The IRFP4332PBF is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.
2. Mounting: Ensure good thermal contact with the heat sink to maintain optimal operating temperatures. Use thermally conductive paste or a similar material between the device and the heat sink.
3. Biasing: Properly bias the gate-source voltage to avoid exceeding the maximum ratings. Keep V(GS) within the specified limits to prevent damage.
4. Current Limitation: Do not exceed the continuous or pulse drain current ratings. For pulse applications, ensure the duty cycle does not lead to excessive power dissipation.
5. Thermal Management: Monitor the junction temperature to stay below the maximum limit of 175°C. Exceeding this can cause permanent damage.
6. Storage: Store in a dry environment within the specified storage temperature range to avoid damage from moisture or extreme temperatures.

For detailed specifications and further information, refer to the manufacturer's datasheet.

(For reference only)