Details

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BUY MJD122G https://www.utsource.net/itm/p/9239125.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0	-	-	80	V
Emitter-Collector Voltage	VECE	IE = 0	-	-	80	V
Collector-Base Voltage	VCBO	IC = 0	-	-	80	V
Base-Emitter Voltage	VBE	IC = 500mA, f = 1kHz	-	2.5		V
Continuous Collector Current	IC	Tc = 25°C	-	500		mA
Pulse Collector Current	ICM	tp = 300μs, Duty Cycle = 2%	-	1000		mA
Power Dissipation	PD	Tc = 25°C	-	625		mW
Junction Temperature	TJ	Operating Range	-55		150	°C
Storage Temperature	TSTG		-65		150	°C

Instructions for MJD122G

1. Mounting and Handling:

   • Handle the device with care to avoid mechanical damage.
   • Ensure proper heat sinking if operating near maximum power dissipation.

2. Electrical Connections:

   • Connect the emitter terminal to the common ground or reference point.
   • Apply base current carefully to control the collector current within specified limits.
   • Ensure that the voltage across collector-emitter does not exceed the maximum rated voltage.

3. Operating Conditions:

   • Operate within the specified temperature range to ensure reliable performance.
   • Keep the junction temperature within the recommended range by using appropriate cooling methods if necessary.

4. Testing:

   • For testing purposes, apply voltages and currents within the specified limits.
   • Use protective circuitry to prevent overvoltage and overcurrent conditions during testing.

5. Storage:

   • Store in a dry environment within the storage temperature range to prevent damage.

6. Safety Precautions:

   • Always disconnect power before making any connections or adjustments.
   • Follow standard safety guidelines when handling electronic components.

(For reference only)