Details

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BUY CSD19535KTT https://www.utsource.net/itm/p/9262001.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source On-Resistance	RDS(on)	VGS = 4.5V, ID = 10A	-	2.8	-	mΩ
Gate Charge	Qg	VDS = 10V, ID = 10A	-	30	-	nC
Input Capacitance	Ciss	VDS = 10V	-	1300	-	pF
Output Capacitance	Coss	VDS = 10V	-	350	-	pF
Total Capacitance	Crss	VDS = 10V	-	950	-	pF
Continuous Drain Current	ID	Tc = 25°C	-	56	-	A
Pulse Drain Current	ID(pulse)	Tc = 25°C, t = 10μs	-	140	-	A
Power Dissipation	PD	Tc = 25°C	-	3.7	-	W
Junction Temperature	TJ	-	-20	-	175	°C

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Handle with care to avoid damaging the leads or body of the device.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Follow recommended PCB layout guidelines to minimize stray inductance.

3. Electrical Connections:

   • Apply gate voltage within specified limits to avoid damage.
   • Ensure source and drain connections are secure and have low resistance.

4. Operation:

   • Operate within the specified temperature range to ensure reliable performance.
   • Monitor junction temperature to prevent overheating.

5. Testing:

   • Use appropriate test conditions as specified in the parameter table for accurate measurements.
   • Avoid exceeding the absolute maximum ratings during testing.

(For reference only)