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Parameter | Description | Value | Unit |
---|---|---|---|
Memory Density | Total memory density | 128 Kbit | |
Organization | Memory organization | 16K x 8 | |
Operating Voltage | Supply voltage range for operation | 1.65 to 3.6 | V |
Standby Current | Current consumption in standby mode | 0.5 | μA |
Active Current | Current consumption in active mode | 1.0 | mA |
Write Time | Maximum time required for a write cycle | 5 | ms |
Package Type | Type of package | SOIC-8 | |
Operating Temperature | Temperature range for normal operation | -40 to +85 | °C |
Endurance | Number of guaranteed write/erase cycles | 1,000,000 | cycles |
Data Retention | Minimum data retention period | 20 | years |
Instructions:
- Power Supply: Ensure the operating voltage is within the specified range (1.65V to 3.6V).
- Pin Configuration: Refer to the datasheet for proper pin connections including Vcc, GND, SI, SO, SCK, and CS.
- Write Operations: Ensure that each write operation does not exceed the maximum write time of 5ms.
- Standby Mode: To minimize power consumption, put the device into standby mode when not in use.
- Temperature Range: Operate the device within the specified temperature range (-40°C to +85°C) to ensure reliable performance.
- Endurance: The device can withstand up to 1,000,000 write/erase cycles. Plan usage accordingly.
- Data Retention: Data will be retained for at least 20 years under recommended operating conditions.
- Handling Precautions: Follow ESD handling precautions to avoid damage to the component.
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