STMicroelectronics TIP31C

STMicroelectronics TIP31C


Specifications
SKU
9724380
Details

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Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 100 V
Emitter-Base Voltage VEBO -5 - - V
Collector Current IC - - 3 A
Power Dissipation PD - - 40 W
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -65 - 150 °C
Transition Frequency fT - 2.5 - MHz

Instructions for Use:

  1. Handling Precautions: Avoid exceeding the maximum ratings listed in the table to prevent damage to the TIP31C transistor.
  2. Mounting: Ensure proper heat dissipation if operating near the maximum power dissipation limits. Consider using a heatsink.
  3. Biasing: For optimal performance, ensure that the base-emitter junction is properly biased according to the application requirements.
  4. Testing: When testing the device, use caution with high currents and voltages. Employ protective measures such as current-limiting resistors.
  5. Storage: Store in a dry environment within the specified storage temperature range to maintain reliability.
  6. Soldering: If soldering, do not exceed temperatures that could lead to junction temperature limits. Follow recommended soldering profiles provided by STMicroelectronics.
(For reference only)

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