Details

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BUY MDT2030P https://www.utsource.net/itm/p/9785220.html

Parameter	Description	Value
Part Number	Unique identifier for the component	MDT2030P
Type	General type of device	MOSFET
Polarity	Device polarity	N-Channel
Package	Physical package type	TO-220
Drain-Source Voltage (Vds)	Maximum voltage that can be applied between drain and source	30V
Gate-Source Voltage (Vgs)	Maximum voltage that can be applied between gate and source	±20V
Continuous Drain Current (Id)	Maximum continuous current through the drain	16A at 25°C, 8.4A at 70°C
Power Dissipation (Ptot)	Maximum power dissipation	95W at 25°C, 47W at 70°C
Rds(on)	On-resistance from drain to source	4.5mΩ at Vgs=10V
Gate Charge (Qg)	Total gate charge	65nC
Operating Temperature Range	Ambient temperature range where the device can operate	-55°C to +150°C

Instructions:

1. Handling Precautions: The MDT2030P is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
2. Mounting: Ensure the TO-220 package is securely mounted on a heatsink if operating near maximum power dissipation limits.
3. Biasing: Apply appropriate gate-source voltage (Vgs) within the specified range to ensure reliable operation and avoid damaging the device.
4. Thermal Management: Monitor junction temperature to ensure it remains within operational limits, especially under high load conditions.
5. Storage: Store in a dry environment to prevent moisture damage.

(For reference only)