Details

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BUY H5PS1G63KFR-S5C https://www.utsource.net/itm/p/9811385.html

Parameter	Description	H5PS1G63KFR-S5C Specifications
Device Type	NAND Flash Memory	1Gb (128M x 8)
Package Type	Package	WSON-16 (9mm x 7mm)
Operating Voltage	VCC Supply Voltage	2.7V to 3.6V
I/O Voltage	I/O Supply Voltage	1.8V
Data Interface	Interface Type	Toggle Mode DDR, 400MHz
Page Size	Page Size	2KB + 64B
Block Size	Block Size	64 Pages
Die Configuration	Die per Package	1 Die
ECC Requirement	Error Correction Code	Up to 24-bit ECC per 1KB
Program Time	Page Program Time	Max 600μs
Erase Time	Block Erase Time	Max 2ms
Read Time	Random Read Time (CL=2)	Max 50ns
Endurance	Program/Erase Cycles	30,000 cycles
Retention	Data Retention	10 years at 25°C
Operating Temperature	Industrial Operating Temperature Range	-40°C to +85°C
Storage Temperature	Storage Temperature Range	-40°C to +85°C

Instructions for Use:

1. Power Supply: Ensure the VCC and I/O supply voltages are within the specified ranges to avoid damage.
2. Initialization: Follow the device initialization sequence as outlined in the datasheet to configure the device properly.
3. Command Sequence: Use the correct command sequences for read, write, and erase operations.
4. Error Handling: Implement error correction algorithms that meet or exceed the ECC requirements specified.
5. Thermal Management: Monitor operating temperature to ensure it remains within the industrial range to prevent overheating.
6. Programming Guidelines: Adhere to the maximum program and erase times to maintain optimal performance and longevity of the device.
7. Handling Precautions: Handle with care to avoid electrostatic discharge (ESD) damage; follow ESD protection guidelines.

For detailed instructions and further specifications, refer to the official datasheet provided by the manufacturer.

(For reference only)