Details

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BUY NTMFS4937NT1G https://www.utsource.net/itm/p/9819694.html

Parameter	Description	Value
Part Number	Part number of the component	NTMFS4937NT1G
Type	Type of semiconductor device	MOSFET
Configuration	Channel type	N-Channel
VDS (Max)	Drain-source voltage	30V
RDS(on) @ VGS=10V	On-state resistance at VGS = 10V	2.8 mΩ
ID @ VGS=10V	Continuous drain current at VGS = 10V	60A
Package Type	Package style	TO-263
Operating Temp.	Operating temperature range	-55°C to +150°C
Gate Charge	Gate charge	11 nC
Input Capacitance	Input capacitance	1450 pF
Output Capacitance	Output capacitance	310 pF
Total Power Dissipation	Total power dissipation	22W

Instructions:

1. Handling Precautions: This device is sensitive to ESD (Electrostatic Discharge). Use appropriate ESD protection measures during handling and assembly.
2. Mounting: Ensure proper mounting to a heatsink if operating near maximum power dissipation limits.
3. Soldering: Follow recommended soldering profiles for the TO-263 package to avoid damage.
4. Storage: Store in original packaging until ready for use, and keep in a dry environment.
5. Testing: When testing the device, ensure that all voltages and currents are within specified limits to prevent damage.
6. Applications: Suitable for applications requiring low on-resistance and high efficiency, such as DC-DC converters, motor drivers, and power supplies.

(For reference only)