Details

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BUY AOT8N80L https://www.utsource.net/itm/p/9822000.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDSS			80	V
Gate-Source Voltage	VGS	-15		15	V
Continuous Drain Current	ID		8		A	TC = 25°C, Rth(j-a) = 62.5°C/W
Pulse Drain Current	Ipp		48		A	TC = 25°C, t = 10μs, Duty = 1%
Gate Charge	Qg		7.5		nC	VGS = 10V
Input Capacitance	Ciss		1390		pF	VDS = 15V, f = 1MHz
Output Capacitance	Coff		300		pF	VDS = 15V, f = 1MHz
Reverse Transfer Capacitance	Crss		550		pF	VDS = 15V, f = 1MHz
Threshold Voltage	VGS(th)	1.5	2.5	4	V	ID = 250μA, TC = 25°C
On-Resistance	RDS(on)		0.12		Ω	VGS = 10V, ID = 8A, TC = 25°C

Instructions for Use:

1. Handling and Storage:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid static damage; use anti-static packaging.

2. Mounting:

   • Ensure proper heat sinking if operating at high currents or temperatures.
   • Follow the manufacturer’s guidelines for mounting torque and thermal interface materials.

3. Electrical Connections:

   • Connect gate and source leads carefully to minimize parasitic inductances.
   • Use wide, short leads for drain connections to reduce inductance.

4. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Ensure that the gate-source voltage does not exceed ±15V to prevent gate oxide damage.

5. Pulse Operation:

   • For pulse applications, ensure that the pulse width and duty cycle are within the specified limits to avoid overheating.

6. Thermal Management:

   • Monitor junction temperature to stay below the maximum allowable limit.
   • Consider derating continuous current as temperature increases.

7. Testing:

   • When testing the device, use appropriate safety measures and adhere to the test conditions provided in the datasheet.

(For reference only)