Details

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BUY IMS2620P-15 https://www.utsource.net/itm/p/9823253.html

Parameter	Description	Value	Unit
Part Number	Product Code	IMS2620P-15	-
Type	Device Type	MOSFET	-
Configuration	Channel Type	N-Channel	-
Vds (Drain-Source Voltage)	Maximum Drain to Source Voltage	200	V
Rds(on) (On-Resistance)	On-State Resistance at Vgs=10V	15	mΩ
Id (Continuous Drain Current)	Continuous Drain Current at Ta=25°C	60	A
Pd (Power Dissipation)	Maximum Power Dissipation at Ta=25°C	348	W
Vgs(th) (Gate Threshold Voltage)	Gate Threshold Voltage	2.0 to 4.0	V
Package Type	Encapsulation Type	TO-247	-
Operating Temperature Range	Junction Temperature Range	-55 to +175	°C

Instructions for Use:

1. Handling and Storage: Store in a dry, cool place away from direct sunlight. Handle with care to avoid damage to the pins or body.
2. Mounting: Ensure proper mounting on a heat sink if operating near maximum power dissipation levels. Follow recommended thermal management guidelines.
3. Electrical Connections: Verify correct polarity when connecting the drain, source, and gate terminals. Incorrect connections can lead to device failure.
4. Driving the Gate: Apply appropriate gate drive voltages as per the Vgs(th) specification. Overdriving can cause excessive heating and potential damage.
5. Thermal Considerations: Monitor junction temperature to ensure it remains within operational limits. Excessive temperatures can reduce lifespan and reliability.
6. Safety Precautions: Always follow safety guidelines when working with high voltages and currents. Use protective equipment as necessary.

(For reference only)