MIP2E9DMY

MIP2E9DMY


Specifications
SKU
9823557
Details

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Parameter Description
Part Number MIP2E9DMY
Type MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration N-Channel
VDS (V) 60
VGS (V) ±20
RDS(on) (mΩ) 4.5 (at VGS = 10V)
ID (A) 32 (Pulsed), 8 (Continuous)
Package TO-220
Operating Temp. -55°C to +150°C
Storage Temp. -55°C to +150°C

Instructions:

  1. Handling Precautions:

    • Handle the MOSFET with care to avoid damage from electrostatic discharge (ESD). Use anti-static wrist straps and mats.
  2. Mounting:

    • Ensure that the mounting surface is clean and free of debris.
    • Apply thermal paste between the MOSFET and heatsink for optimal heat dissipation if necessary.
  3. Soldering:

    • Preheat components before soldering to prevent thermal shock.
    • Use a temperature-controlled soldering iron set no higher than 300°C.
    • Do not exceed 10 seconds per solder joint to avoid damaging the device.
  4. Electrical Connections:

    • Verify all connections are correct before applying power.
    • Ensure proper isolation between the gate, source, and drain terminals to prevent short circuits.
  5. Testing:

    • Test the MOSFET in a controlled environment to ensure it operates within specified parameters.
    • Monitor the temperature during operation to ensure it does not exceed the maximum operating temperature.
  6. Storage:

    • Store in original packaging in a cool, dry place away from direct sunlight.
    • Keep in an ESD protective bag when not in use.
(For reference only)

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