Details

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BUY K1812 https://www.utsource.net/itm/p/9824270.html

Parameter	Description	Value
Part Number	Device part number	K1812
Type	Type of device	Diode
Material	Semiconductor material	Silicon
Maximum Reverse Voltage (Vr)	Maximum reverse voltage the diode can withstand	1000 V
Maximum Forward Current (If)	Maximum forward current the diode can handle	1 A
Peak Surge Current (Ism)	Peak non-repetitive surge current	30 A
Junction Operating Temperature (Tj)	Operating temperature range of the junction	-65 to +175 °C
Storage Temperature (Ts)	Temperature range for storage	-65 to +175 °C
Forward Voltage (Vf) at 1A	Voltage drop across the diode when conducting 1A	1.1 V
Reverse Recovery Time (trr)	Time taken by the diode to recover from conducting to blocking state	50 ns

Instructions:

1. Handling Precautions: Handle with care to avoid damage. Ensure proper ESD protection.
2. Mounting: Mount in a way that allows adequate heat dissipation if operating near maximum ratings.
3. Voltage and Current Ratings: Do not exceed the maximum reverse voltage or forward current ratings to prevent device failure.
4. Surge Current: Ensure any surge currents do not exceed the peak surge current rating.
5. Temperature Considerations: Operate within the specified junction and storage temperature ranges to ensure reliable performance.
6. Testing: Before installation, verify the device parameters using appropriate testing methods.
7. Storage: Store in a dry environment within the specified storage temperature range.

(For reference only)