Details

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BUY GT50J121 https://www.utsource.net/itm/p/9827194.html

Parameter	Description	Value	Unit
Part Number	Full part number	GT50J121	-
Type	Component type	MOSFET	-
Package	Housing type	TO-220	-
VDS (Max)	Drain-source voltage	50	V
ID (Max)	Continuous drain current	12.1	A
PD (Max)	Power dissipation	62.5	W
RDS(on) (Max)	On-resistance at specified conditions	0.034	Ω
VGS(th) (Min/Max)	Gate threshold voltage	1.0 / 2.5	V
Qg	Total gate charge	79	nC
TJ (Max)	Operating junction temperature	150	°C

Instructions for Use:

1. Handling Precautions: The GT50J121 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits to maintain the junction temperature within safe operating levels.
3. Biasing: Apply gate voltage carefully, ensuring it does not exceed the VGS(max) specification to prevent damage.
4. Storage: Store in a dry, cool place away from direct sunlight and corrosive environments.
5. Testing: When testing the device, ensure that all parameters are within the specified limits to avoid premature failure or inaccurate performance readings.
6. Soldering: Follow standard soldering practices for surface mount devices. Avoid overheating during soldering as it can damage the component.

For detailed application circuits and more comprehensive information, refer to the datasheet provided by the manufacturer.

(For reference only)