Details
BUY MRFE6VS25NR1 https://www.utsource.net/itm/p/10036271.html
| Parameter | Description | Value | 
|---|---|---|
| Part Number | Full part number | MRFE6VS25NR1 | 
| Type | Type of device | RF Power MOSFET | 
| Package | Package type | TO-247-3 | 
| VDSS | Drain-source breakdown voltage | 50V | 
| ID | Continuous drain current | 25A | 
| RDS(on) | On-state resistance at 25°C | 5.5 mΩ | 
| Qg | Total gate charge | 29 nC | 
| fT | Transition frequency | 80 MHz | 
| PD | Maximum power dissipation | 140 W | 
| SOA | Safe operating area | Refer to datasheet | 
| Operating Temperature | Junction temperature range | -55°C to +150°C | 
Instructions:
- Handling Precautions: The MRFE6VS25NR1 is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling.
- Mounting: Ensure adequate heat sinking for the TO-247-3 package to manage thermal performance, especially when operating near maximum power dissipation.
- Biasing and Operation: Operate within the safe operating area (SOA) limits provided in the datasheet to avoid damage or degradation.
- Storage: Store in a dry environment to prevent moisture damage.
- Testing: When testing, ensure all parameters are within specified limits to avoid overstressing the device.
For detailed specifications and application notes, refer to the manufacturer's datasheet.
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