BTB06-600CW

BTB06-600CW

Category: Transistors

Specifications
SKU
10260936
Details

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Parameter Symbol Conditions Min Typ Max Unit
Repetitive Peak Off-State Voltage V DRM T J = 25°C - 600 - V
Repetitive Peak Reverse Voltage V RRM T J = 25°C - 600 - V
Non-Repetitive Peak Off-State Voltage V DPM I RM = 13.5A, t = 10ms, T J = 25°C - 740 - V
Maximum RMS On-State Current (at case temperature) I T(RMS) T C = 75°C - 6 - A
Maximum Latching Current I L(MIN) T J = 25°C 8 - - mA
Minimum Holding Current I H(MAX) T J = 25°C - 4 - mA
Gate Trigger Current I GT T J = 25°C, V G = 5V 10 - - mA
Gate Trigger Voltage V GT I GT = 10mA, T J = 25°C 1.5 - 2.5 V
Power Dissipation P D T C = 75°C - 2.5 - W
Junction Temperature T J - - - 125 °C

Instructions for BTB06-600CW

  1. Mounting and Handling:

    • Handle the device with care to avoid damage.
    • Ensure proper heat sinking if operating at high currents or temperatures.
  2. Electrical Connections:

    • Connect the device according to the circuit diagram provided in the datasheet.
    • Ensure that the gate trigger voltage and current are within specified limits to prevent damage.
  3. Thermal Management:

    • Monitor junction temperature to ensure it does not exceed 125°C.
    • Use appropriate heatsinks or cooling methods if necessary.
  4. Operating Conditions:

    • Do not exceed the repetitive peak off-state voltage of 600V.
    • Ensure the RMS on-state current does not exceed 6A at a case temperature of 75°C.
  5. Testing:

    • Verify that the latching and holding currents meet the minimum and maximum specifications during testing.
    • Check gate trigger characteristics to ensure reliable operation.
  6. Storage:

    • Store in a dry, cool place away from direct sunlight and sources of heat.

For detailed application notes and further information, refer to the manufacturer's datasheet.

(For reference only)

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