Details

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BUY SIHF15N60E-EG3 https://www.utsource.net/itm/p/11229017.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES	-	-	600	V	Maximum voltage between collector and emitter with the gate open.
Gate-Source Voltage	V GS	-15	-	15	V	Maximum allowable gate-source voltage.
Continuous Drain Current	I D	-	15	-	A	Continuous drain current at T C = 25°C.
Pulse Drain Current	I DM	-	89	-	A	Non-repetitive peak pulse drain current.
Total Device Dissipation	P TOT	-	-	130	W	Maximum total device dissipation.
Junction Temperature	T J	-	-	175	°C	Maximum junction temperature.
Storage Temperature	T STG	-55	-	175	°C	Operating temperature range for storage.

Instructions for Use:

1. Handling Precautions:

   • Ensure proper handling of the SIHF15N60E-EG3 to avoid damage from electrostatic discharge (ESD). Use ESD-safe equipment and practices.

2. Mounting:

   • Mount the device on a suitable heatsink to ensure effective heat dissipation, especially when operating near maximum power dissipation limits.
   • Follow mechanical mounting guidelines to prevent mechanical stress on the device which can affect performance and reliability.

3. Electrical Connections:

   • Connect the gate terminal carefully to avoid excessive inductance which can cause oscillations or false triggering.
   • Ensure all connections are secure and free from contaminants that could cause shorts or high resistance.

4. Thermal Management:

   • Monitor the junction temperature during operation to ensure it does not exceed the maximum limit of 175°C.
   • Use thermal interface materials (TIM) like thermal paste or pads to enhance heat transfer between the device and the heatsink.

5. Operation:

   • Operate within specified voltage and current limits to avoid damaging the device.
   • For optimal performance, operate within the recommended operating conditions provided in the datasheet.

6. Testing:

   • Before full-scale deployment, test the device under actual operating conditions to verify performance and reliability.
   • Conduct thorough testing for parameters like switching speed, on-state resistance, and leakage currents.

For detailed specifications and further instructions, refer to the official datasheet provided by the manufacturer.

(For reference only)