Details

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BUY SIHP22N60E https://www.utsource.net/itm/p/11229602.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On Resistance	RDS(on)	-	0.175	-	Ω	VGS = 10V, ID = 20A
Gate Charge	QG	-	94	-	nC	VGS = 10V
Input Capacitance	Ciss	-	1640	-	pF	VDS = 15V
Output Capacitance	Coss	-	320	-	pF	VDS = 15V
Total Gate Charge	QG	-	94	-	nC	VGS = 10V
Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	ID = 1mA
Continuous Drain Current	ID	-	22	-	A	Tc = 25°C
Pulse Drain Current	IDM	-	88	-	A	tp = 10ms
Power Dissipation	PD	-	-	200	W	TC = 25°C
Junction Temperature	TJ	-	-	150	°C

Instructions for Use:

1. Operating Conditions: Ensure that the operating conditions (temperature, voltage, and current) do not exceed the maximum ratings provided in the table.
2. Mounting: For optimal performance, mount the device on a suitable heat sink to manage heat dissipation effectively.
3. Gate Drive: Apply sufficient gate voltage (typically 10V) to ensure low RDS(on). Avoid exceeding the threshold voltage to prevent unintended operation.
4. Storage: Store in a dry, cool environment to prevent damage from moisture or extreme temperatures.
5. Handling: Handle with care to avoid mechanical damage or electrostatic discharge (ESD), which can harm the semiconductor junctions.

For detailed application notes and further technical support, refer to the manufacturer's datasheet or website.

(For reference only)