Details

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BUY SIHP33N60E-GE3 https://www.utsource.net/itm/p/11233197.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	0.15	-	Ω	At VGS = 10V, ID = 27A
Continuous Drain Current	ID	-	-	33	A	TC = 25°C
Pulse Drain Current	IGM	-	-	140	A	tP = 10μs, Duty Cycle ≤ 0.1%
Gate Charge	QG	-	86	-	nC	VDS = 600V, VGS = ±10V, ID = 27A
Input Capacitance	Ciss	-	2700	-	pF	VDS = 600V
Output Capacitance	Coss	-	960	-	pF	VDS = 600V
Reverse Transfer Capacitance	Crss	-	1080	-	pF	VDS = 600V
Total Gate Charge	QG	-	86	-	nC	VDS = 600V, VGS = ±10V, ID = 27A
Threshold Voltage	VGS(th)	2.0	2.5	3.0	V	ID = 1mA
Maximum Drain-Source Voltage	VDSS	-	-	600	V	-

Instructions for SIHP33N60E-GE3

1. Handling and Storage:

   • Store in a dry, cool place.
   • Handle with care to avoid damage to the pins or body.

2. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use appropriate mounting hardware to secure the device firmly.

3. Biasing:

   • Apply gate-source voltage (VGS) within the specified range to ensure reliable operation.
   • Avoid exceeding the maximum gate-source voltage rating to prevent damage.

4. Operation:

   • Operate within the continuous drain current (ID) and pulse drain current (IGM) ratings.
   • Monitor junction temperature; do not exceed the maximum allowable temperature.

5. Testing:

   • When testing, use recommended test conditions as specified in the datasheet.
   • Ensure that all safety precautions are followed during testing.

6. Application Notes:

   • Refer to application notes for detailed information on using this device in specific circuits.
   • For high-frequency applications, consider parasitic capacitances and inductances.

7. Safety Precautions:

   • Always follow safety guidelines when handling electronic components.
   • Use protective equipment such as gloves and goggles when necessary.

(For reference only)