Details

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BUY CS4N65F https://www.utsource.net/itm/p/11265925.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 10V, ID = 2A	-	65	-	mΩ
Gate-Threshold Voltage	VGS(th)	ID = 250μA, IG = 5μA	1.0	1.8	3.0	V
Continuous Drain Current	ID	TC = 25°C	-	-	2.4	A
Continuous Drain Current	ID	TC = 70°C	-	-	1.9	A
Pulse Drain Current	IDP	tp = 1ms, TC = 25°C	-	-	4.6	A
Total Power Dissipation	PD	TC = 25°C	-	-	280	mW
Junction Temperature	TJ	-	-55	-	150	°C
Storage Temperature Range	TSTG	-	-55	-	150	°C

Instructions for Use:

1. Handling Precautions: The CS4N65F is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
2. Operating Conditions: Ensure that the operating conditions (voltage, current, temperature) do not exceed the maximum ratings provided in the table.
3. Thermal Considerations: Pay attention to the junction temperature (TJ) and ensure adequate heat dissipation if the device is used near its maximum continuous drain current or power dissipation limits.
4. Gate Drive Requirements: For optimal performance, ensure that the gate voltage (VGS) is within the recommended range. Avoid voltages below the gate-threshold voltage (VGS(th)) as it may lead to unreliable operation.
5. Mounting: Follow manufacturer guidelines for mounting to ensure proper thermal management and mechanical integrity.

(For reference only)