Details

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BUY SI3801DV https://www.utsource.net/itm/p/11291678.html
SI3801DV Complex FET -12V -2.3A SOT-163/SOT23-6/TSOP-6 marking O1

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VDD	Operating	2.7	-	5.5	V
Quiescent Current	IQ	VDD = 3.3V	-	10	-	μA
Output Current	IO	VOUT = 0.4V, VDD = 3.3V	60	-	120	mA
Forward Voltage	VF	IF = 20mA	1.2	-	1.8	V
Reverse Breakdown Voltage	VRM	IR = 1μA	-	-	5	V
Junction Temperature	TJ	Storage	-40	-	85	°C

Instructions for SI3801DV:

1. Power Supply Connection:

   • Connect the VDD pin to a power supply within the range of 2.7V to 5.5V.
   • Ensure stable power supply to avoid fluctuations that can affect performance.

2. Current Limitation:

   • The device can handle an output current up to 120mA under typical conditions (VOUT = 0.4V, VDD = 3.3V). Do not exceed this limit to prevent damage.

3. Operating Temperature:

   • The junction temperature should be kept between -40°C and 85°C for optimal performance and reliability.

4. Forward Voltage Consideration:

   • When operating at a forward current of 20mA, expect a forward voltage drop between 1.2V and 1.8V.

5. Reverse Voltage Protection:

   • The reverse breakdown voltage is up to 5V at a reverse current of 1μA. Avoid applying higher reverse voltages to protect the device.

6. Quiescent Current:

   • At a supply voltage of 3.3V, the quiescent current is typically 10μA. This value helps in designing low-power applications.

7. Handling Precautions:

   • Use appropriate ESD protection when handling the device to prevent damage from static electricity.
   • Follow the manufacturer’s guidelines for soldering and mounting to ensure reliable operation.

For detailed specifications and additional information, refer to the official datasheet provided by the manufacturer.

(For reference only)