1SI10A-100

1SI10A-100

Category: ModulesIGBT

Specifications
SKU
11886666
Details

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Parameter Value Unit
Part Number 1SI10A-100 -
Type Silicon Diode -
Maximum Reverse Voltage (Vr) 100 V
Maximum Forward Current (If) 1.0 A
Peak Forward Surge Current (Ifsm) 30 A
Total Power Dissipation (Ptot) 500 mW
Junction Temperature (Tj) -55 to +150 °C
Storage Temperature (Ts) -55 to +150 °C

Instructions:

  1. Installation: Ensure that the diode is correctly oriented with respect to polarity markings before installation. The cathode (negative side) and anode (positive side) must be connected according to circuit design.
  2. Operating Conditions: Operate within the specified maximum reverse voltage and forward current limits to avoid damage or reduced lifespan.
  3. Thermal Management: Maintain junction temperature within the specified range (-55°C to +150°C). Use appropriate heat sinking if necessary to dissipate heat effectively.
  4. Surge Handling: Be aware of the peak forward surge current capability (30A) for transient conditions but do not exceed this value frequently as it can degrade the component over time.
  5. Storage: Store in a dry environment within the storage temperature range to prevent damage from moisture or extreme temperatures.
(For reference only)

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