Details

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BUY SKKT323/16E https://www.utsource.net/itm/p/11950775.html
 

Parameter	Description
Device Type	SRAM (Static Random Access Memory)
Memory Size	32K x 16 bits
Supply Voltage	VCC = 5.0V ± 0.5V
Operating Temp.	-40°C to +85°C
Access Time	tAA = 15 ns typical
Data Retention	20 years at 25°C
Package Type	SOJ-28, TSSOP-28
Power Consumption	Active: 70 mW, Standby: 1 μW

Instructions for Use:

1. Power Supply Connection: Ensure the power supply voltage is within the specified range of 4.5V to 5.5V. Connect VCC to the positive supply and GND to the ground.

2. Addressing: Apply the address to the address lines (A0-A14) before the rising edge of the clock signal to select the desired memory location.

3. Data Input/Output: Data is read from or written to the data lines (D0-D15) during the low period of the Write Enable (WE#) signal. For reading, ensure WE# is high.

4. Chip Select (CS#): The chip must be selected by pulling CS# low. If CS# is high, the device remains in a high-impedance state.

5. Write Enable (WE#): To write data, pull WE# low while CS# is also low. Data on the D0-D15 lines will be written into the addressed location.

6. Output Enable (OE#): Pull OE# low to enable data output from the addressed location. Ensure OE# is low when reading data.

7. Handling Precautions: Handle the device with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection measures.

8. Temperature Considerations: Operate the device within the temperature range specified to ensure reliable performance and longevity.

9. Storage Conditions: Store the device in a dry environment to prevent moisture damage. Follow recommended storage practices to maintain device integrity.

(For reference only)