Details

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BUY IPP60R190P6 https://www.utsource.net/itm/p/12031630.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
On-State Resistance	RDS(on)	VGS = 10V, ID = 25A	-	190	-	mΩ
Gate Charge	Qg	VDS = 600V, ID = 25A	-	87	-	nC
Input Capacitance	Ciss	VDS = 600V	-	3400	-	pF
Output Capacitance	Coff	VDS = 600V	-	130	-	pF
Threshold Voltage	Vth	ID = 1mA	2.0	4.0	6.0	V
Continuous Drain Current	ID	Tc = 25°C	-	-	25	A
Pulse Drain Current	Ipp	tp = 10μs, Tc = 25°C	-	-	150	A
Maximum Junction Temperature	Tjmax	-	-	-	175	°C

Instructions for IPP60R190P6:

1. Handling Precautions: The IPP60R190P6 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
2. Mounting: Ensure that the device is securely mounted on a suitable heatsink if operating at high currents or in environments with elevated temperatures to maintain junction temperature within safe limits.
3. Gate Drive: Apply gate voltages within specified limits to avoid damage. Recommended gate drive voltage is typically 10V for optimal performance.
4. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
5. Application Considerations: Verify that the maximum ratings are not exceeded under all operating conditions. Pay particular attention to continuous drain current and junction temperature limits.
6. Testing: For accurate testing, use the specified test conditions provided in the parameter table.

(For reference only)